FeCuNbSiB多层膜的磁化特性与巨磁阻抗效应  

Magnetization processes and giant magneto-impedance effect in feCuNbSiB multilayered flims

作　　者：林宏[1] 袁望治[1] 赵振杰[1] 程金科[1] 辛宏梁[1] 吴志明[1] 阮建中[1] 杨燮龙[1] 

机构地区：[1]华东师范大学物理系,上海200062

出　　处：《功能材料与器件学报》2007年第6期666-670,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.20575022);上海市科委科技基金(No.0652nm036);上海市科学技术委员会启明星基金(No.04QMX1422)

摘　　要：用射频磁控溅射法制备了FeCuNbSiB多层膜,制备态样品的GMI效应在驱动电流频率为12MHz时达到最大,为44.3%。利用复数磁导率和等效电路讨论了该多层膜的磁化过程,及与GMI效应的关系。外加直流磁场抑制磁畴运动,在等效电路中与抵消并联电路相关。样品磁化的特征弛豫频率在12MHz左右,与出现最大磁阻抗变化的频率接近。FeCuNbSiB multilayered flims are prepared by radio frequency （RF） sputtering. The as -cast sample has a maximum GMI ratio of 44.3% at 12MHz. Complex permeability and equivalent circuits are used to demonstrate the magnetization processes, which are relevant to GMI effect. DC applied field is to produce a damping in domain wall movements, which is responsible for the minus parallel RL arm in equivalent cirCuits. The relaxation frequency of the sample is about 12MHz, near which the maximum GMI happens.

关 键 词：巨磁阻抗效应 磁导率 弛豫频率 等效电路 

分 类 号：O482.5[理学—固体物理] O442[理学—物理]