钙钛矿结构氧化物电脉冲诱发可逆变阻机理的研究进展  

Research progress on the mechanism of electric-pulse-induced reversible resistance change of perovskite oxides

作　　者：黄丽娜[1] 曲炳郡[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《功能材料与器件学报》2007年第6期677-682,共6页Journal of Functional Materials and Devices

基　　金：非磁激励庞磁电阻效应型不挥发存储器研究(No.90407013).

摘　　要：系统论述了钙钛矿结构氧化物电脉冲诱发可逆变阻效应的非挥发存储机理,对三种物理模型:体效应模型、界面效应模型和导电畴隧穿模型进行了详细讨论,并提出了可逆变阻效应的实用化所面临的关键问题及其发展方向。The nonvolatile storage mechanism of electric - pulse - induced reversible resistance change of perovskite oxides is reviewed systematically. Three physical models： bulk effect model, interracial effect model and domain -tunneling model are discussed in detail. Both the future development and the critical issues that relate to the practical application of the reversible resistance change effect are put forward as well.

关 键 词：电脉冲诱发电阻转变 钙钛矿结构氧化物 庞磁电阻 电阻随机存取存储器 

分 类 号：TN304[电子电信—物理电子学] O638.6[理学—高分子化学]