双钙钛矿锶铁钼氧薄膜的制备和电学性质研究  

A Detailed Study on the Preparation and Electric Properties of the Double Perovskites Sr_2FeMnO_6(SFMO) Film

作　　者：何光旭[1] 荆丽华[1] 李钢[1] 朱明[1] 

机构地区：[1]东南大学物理系,江苏南京211189

出　　处：《化工时刊》2007年第12期17-20,共4页Chemical Industry Times

基　　金：江苏省自然科学基金BK2004078资助

摘　　要：本文通过溶胶-凝胶的方法在Si单晶片上制备了定向生长的双钙钛矿结构的巨磁电阻薄膜材料Sr2FeMnO6(SFMO)。X射线衍射结果表明,该SFMO薄膜在硅单晶片上成相情况较好,薄膜为多晶结构,晶格常数a=78.916 nm、b=75.995 nm、c=103.686 nm。电流-电压(I-V)特性曲线表明SFMO具有类似于p-n结的整流特性。SFMO独特的电学性质,有可能在某些应用领域中被用作为半导体的替代材料;同时由于SFMO的电输运行为与磁学行为的相互关联,使得SFMO在电子自旋器件的应用成为可能。Using Sol- Gel method, the epitaxial double perovskite （SFMO） thin film was prepared on the Si（100） wafer. The X - ray diffraction technique was used to analyze microstructure of SFMO film. The results showed that： SFMO film was well structured. The film which was on the surface of the Si substrate was multicrystal. The lattice of SFMO film constants were a = 78.916 nm,b = 75.995 nm,c = 103.686 nm. The Ⅰ- Ⅴ curve showed that SFMO film had the rectification properties, which was alike the Ⅰ- Ⅴ properties of p - n junction. Because SFMO had unique electric and magnetic behaviors, they could be used as peculiar semiconductor material of the special electronic devices.

关 键 词：双钙钛矿 锶铁钼氧 电流-电压特性 

分 类 号：TB383.2[一般工业技术—材料科学与工程]