Realization of an 850V High Voltage Half Bridge Gate Drive IC with a New NFFP HVI Structure  

作　　者：Ming Qiao Hong-Jie Wang Ming-Wei Duan Jian Fang Bo Zhang Zhao-Ji Li 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China （UESTC）,Chengdu, 610054, China

出　　处：《Journal of Electronic Science and Technology of China》2007年第4期328-331,共4页中国电子科技（英文版）

基　　金：This work was supported by the National Nature Science Foundation of China under Grant No.60436030.

摘　　要：A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.

关 键 词：High voltage interconnection multiple floating field plate no floating field plate SELF-SHIELDING high voltage half bridge gate drive IC. 

分 类 号：TN4[电子电信—微电子学与固体电子学]