电子束蚀刻聚酰亚胺制备微孔分离膜的研究  

Manufacture of polyimide micron-hole separation membrane by electron beam etching

作　　者：吴新锋[1] 李红斌[1] 郝旭峰[2] 周菲[2] 邓邦俊[2] 费舜廷[2] 周瑞敏[2] 

机构地区：[1]上海大学环化学院化工系,上海201800 [2]上海大学射线应用研究所,上海201800

出　　处：《辐射研究与辐射工艺学报》2007年第6期345-349,共5页Journal of Radiation Research and Radiation Processing

基　　金：上海市纳米科技与产业发展促进中心(G0905);上海市重点学科(T0105)资助

摘　　要：以电子束蚀刻技术,结合微孔掩膜和溶液氧化腐蚀的方法,制备聚酰亚胺(Polyimide,PI)微孔分离膜。通过称重法,讨论了吸收剂量、腐蚀时间和腐蚀温度等因素对PI基膜蚀刻和腐蚀的影响,结果表明,随着吸收剂量、腐蚀温度和腐蚀时间的增加,PI基膜更容易被腐蚀;IR检测结果表明,辐照导致PI分子化学键断裂,分子量变小,是辐照PI腐蚀失重率增加的原因;试验对微孔铅和铁掩膜遮蔽的PI基膜进行电子束辐照,再用浓硫酸和重铬酸钾混合溶液腐蚀辐照PI基膜,得到具有规则且垂直孔道的聚酰亚胺微孔分离膜。Polyimide （PI） film etched by electron beam （EB） to produce PI micron-hole separation membrane combined with the methods of masks and oxygenation corrosion was studied in this paper. The effect of the absorbed doses, corrosion time and corrosion temperature on the corrosion speed of irradiated PI were discussed. The results showed that the corrosion speed of irradiated PI grew up with increasing the corrosion temperature, corrosion time and absorbed dose gradually. The analysis of infrared spectroscopy （IR） indicated that the main chain of PI molecules was broken by EB to certain extent. It meant the molecule weight of PI turned small and PI film was eroded easily by oxidation solution. In the EB etching process, a piece of lead mask with micron-holes was covered on the PI film and was etched by EB. And then the irradiated PI film was eroded by the solution of H2SO4 and K2Cr2O4. A piece of PI micron-hole separation membrane was gained by this technology.

关 键 词：电子束辐照 聚酰亚胺 腐蚀 分离膜 蚀刻 

分 类 号：O633.21[理学—高分子化学] O571.33[理学—化学]