射频磁控溅射法制备PI基CeO_2-TiO_2复合薄膜  

Synthesis of the CeO_2-TiO_2 Composite Films by Radio Frequency Magnetron Sputtering on PI Substrate

作　　者：刘晓燕[1] 赵玉涛[1] 张松利[1] 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013

出　　处：《硅酸盐通报》2007年第6期1068-1072,共5页Bulletin of the Chinese Ceramic Society

基　　金：江苏省复合材料工程技术研究中心研发项目(BM2003014);江苏省自然科学基金资助项目(BK2003051)

摘　　要：采用射频磁控溅射技术在柔性基体PI(聚酰亚胺)上制备了纳米CeO2-TiO2复合薄膜。借助X射线衍射(XRD)、原子力显微镜(AFM)和紫外-可见光谱仪分别研究了薄膜的物相结构、表面生长形貌和薄膜的紫外-可见光透过率及光学能隙,并用WS-2000型薄膜划痕仪测定薄膜与基体的界面结合强度。实验结果表明:沉积态的薄膜为非晶态,经200℃退火处理4h后,转化为良好的晶态,薄膜中主要含有锐钛矿相结构;溅射功率对薄膜的形貌,光学性能及界面结合力均有影响。尤其当溅射功率为120W时,薄膜的综合性能最优;平均晶粒尺寸110nm,表面粗糙度为160nm,吸光率达80%,光学能隙Eg仅为(2.65±0.05)eV,划痕法测量涂层与基体的附着力为60N。The CeOE-TiO2 composite films on flexible PI（polyimide） substrate were deposited by radio- frequency magnetron sputtering （RF-MS）. XRD, AFM and UV-VIS spectral photometer were used to investigate the phase composition, surface morphology, transmission and optical bandgap of the films, respectively. In addition, the interface bond strength is measured by WS-2000 film nick instrument. Results show that the deposited films are amorphous, which can be transferred to perfect crystal phase after annealed under 200℃ for 4h; and there is mainly anatase phase in the films; the surface morphology, optical properties and the interfacial adhesion of the films are all effected by the sputtering power. Particularly, the comprehensive properties of the films get best when the sputtering power is 120W, namely, the average grain size, roughness, absorbance, bandgap and adhesion of the CeO2-TIO2 composite films are about ll0nm, 160nm, 80%, （2.65±0.05）eV and 60N, respectively.

关 键 词：CeO2-TiO2复合薄膜 PI 微观形貌 透光率 附着力 

分 类 号：TB43[一般工业技术]