Co掺杂对化学气相输运法合成ZnO形貌影响  

The Morphologic Effect of Co-doped on the ZnO Crystals by Chemical Vapor Transport Method

作　　者：李志强[1] 徐丽云[1] 赵起[1] 郑一博[1] 韦志仁[1] 侯志青[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《硅酸盐通报》2007年第6期1211-1214,共4页Bulletin of the Chinese Ceramic Society

基　　金：河北省自然科学基金项目(E2006001008;E2007000197)

摘　　要：采用化学气相输运法,研究了在蓝宝石基片上大比例掺杂Co生成的ZnO晶体形貌。分别选用Co2O3与ZnO的质量比3%、5%、7%、15%、20%5种不同含量的样品,通过电子显微镜发现得到的晶体呈六棱结构,一般显露柱面m{1010}、正锥面p{1011}、负极面c{0001}和正极面c{0001},随着Co掺入量的增加得到的Zn1-xCoxO晶体表面趋于光滑,晶体六棱结构趋于不对称,锥面面积减小,极性生长特性减弱。Zn1-xCoxO晶体的X射线能谱图显示Co的掺入量与原料配比中Co的量几乎成正比,Co可以大比例掺入ZnO晶体中。In this paper, The morphology of the ZnO doped with high concentration Co by chemical vapor transport method on the sapphire substrate was investigated . The concentration of Co in different ZnO samples were 3% ,5% ,7%, 15% ,20%, respectively. By SEM, it is found that the crystals hexagonal structure and usually exposed hexagonal face m {1050} , positive pyramidal face P{1011},negative polar face c{0001} and positive polar face c{0001}, as Co concentration increasing, Zn1-xCoxO crystals surface tend to be smooth, the crystal hexagonal structures tend to be asymmetric, the conical area reduces, and Be polar growth property is weaken, It is showed that Co-doped concentration increase with increasing Co in the raw material by EDS , Co can dope into the ZnO crystals with high concentration.

关 键 词：化学气相输运法 蓝宝石 Zn1-xCoxO晶体 

分 类 号：TN304.82[电子电信—物理电子学]