厚胶光刻蚀刻中的图形展宽分析与改善研究  

The analysis of figure′s widen and study of its minished in photolithography and etching for thick photoresist

作　　者：冀翔[1] 杨国光[1] 侯西云[1] 刘晓旻[1] 陈滟[1] 田丰[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,浙江杭州310027

出　　处：《光学仪器》2007年第6期74-80,共7页Optical Instruments

摘　　要：为了刻蚀出低损耗波导沟道,对光刻和反应离子束蚀刻(RIE)中影响展宽的工艺条件进行理论分析和实验实践,提出采用多次旋涂、消除芽孢、低温后烘和刻蚀、光学稳定等措施减小展宽,并对不能完全消除的展宽分析给出原因。实验结果表明展宽得到有效的改善。For etching low loss waveguide, the figure＇s widen processings interrelated photolithography and reaction ion etching（RIE）are analysed in theory and experimentalized in practice. To minish figure＇s widen, the techniques are put forward such as spinning more times, minishing buds, baking and etching at low temperature and optical stabilizing, and the reason for not minishing completely are questing for too. The effective minishing is shown by the result.

关 键 词：光刻 芽孢 反应离子束刻蚀 温度效应 二次效应 

分 类 号：O485[理学—固体物理]