一种带热滞回功能的低功耗CMOS过热保护电路  

A Low Power consumption CMOS Thermal-shutdown Circuit with Hysteresis

作　　者：孙俊岳[1] 刘军[1] 蒋国平[1] 

机构地区：[1]大连理工大学,辽宁大连116023

出　　处：《现代电子技术》2008年第1期168-171,共4页Modern Electronics Technique

摘　　要：采用0.5μm CMOS工艺,设计了一种具有热滞回功能的过热保护电路,并利用Cadence Spectre仿真工具对电路进行了仿真。结果表明,电路的输出信号对电源的抑制能力很强,在3.5 V以上的电源电压工作下,过热温度点基本保持不变,正向约为155℃,负向约为105℃,同时,在27℃,5 V电源电压工作下,电路功耗约为0.25 mW。由于其高稳定和低功耗的特性,可广泛应用在各种集成电路内部。Using 0.5 μm CMOS technology, this paper presents a thermal - shutdown circuit with hysteresis. This circuit is simulated by using the tool of Cadence Spectre. It shows the circuit has an excellent ability of power rejection. Above the 3.5 voltage of power,the temperature of thermal - shutdown is constant. The plus temperature is about 155℃ and the minus one is about 105 ℃. Meanwhile,the power consumption is little. It is 0.25 mW under the power of 5 V. Because of the better performances of high stability and low power consumption, this thermal -shutdown circuit can be widely used in many kinds of integrated circuits.

关 键 词：CMOS 过热保护电路 低功耗 热滞回 

分 类 号：TN43[电子电信—微电子学与固体电子学] TP34[自动化与计算机技术—计算机系统结构]