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作 者:张文彬[1] 郑国宗[1] 苏根博[1] 庄欣欣[1] 李征东[1]
机构地区:[1]中国科学院福建物质结构研究所
出 处:《人工晶体学报》2007年第6期1230-1234,共5页Journal of Synthetic Crystals
基 金:国家863基金子项目(No.863-804-2)
摘 要:本文旨在寻找影响杂质阳离子进入KDP晶体能力的因素,我们使用分析纯的KH2PO4和超纯水(电阻率≥18.2MΩ.cm)为原料,分别加入BaCl2.2H2O,CuCl2.2H2O和MgCl2.6H2O,通过降温方式快速生长出KDP晶体。结果表明,Cu2+及Mg2+在晶体中的含量基本保持不变,不随其在生长溶液中量的增大而增大,Cu2+在晶体中的含量大于Mg2+在晶体中的含量;不同的是,Ba2+在晶体中的含量随着其在生长溶液中量增大而增大。从实验结果我们推断出离子半径和离子水合热是影响二价杂质阳离子在水溶液晶体生长过程中进入KDP晶体能力的重要因素。The aim of this paper is to investigate the factors affecting the ability of cations as impurity to incorporate the KDP crystal. KH2PO4 powder (AR) and deioned water (resistivity≥18. 2MΩ·cm) were used as raw materials,BaCl2·2H2O, CuCl2·2H2O and MgCl2 ·6H2O were doped respectively. The results show that the content of Cu^2+ and Mg^2+ in the crystal basically keep constant and doesn't increase rwith the increasing of that in the solution, and the content of Cu^2+ in the crystal is larger than that of Mg^2+ in the crystal. However, the content of Ba^2+ in the crystal increases with the increasing content of Ba^2+ in the solution. It can be deduced from the experimental results that both the ionic radius and the dehydration heat are the important factors affecting the ability of the divalent cations to incorporate the KDP in the process of crystal growth from solution.
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