用化学溶液方法在Ni-5at% W基底上制备La_2Zr_2O_7过渡层的研究  

Fabrication of La_2Zr_2O_7 Buffer Layer on Ni-5at% W Substrates by Chemical Solution Depsition

作　　者：何东[1] 索红莉[1] 赵跃[1] 刘敏[1] 张迎肖[1] 叶帅[1] 马灵姬[1] 周美玲[1] 

机构地区：[1]北京工业大学材料科学与工程学院新型功能材料教育部重点实验室,北京100022

出　　处：《人工晶体学报》2007年第6期1297-1300,1287,共5页Journal of Synthetic Crystals

基　　金：国家973计划项目(No.2006CB601005);国家教委全国百篇优秀博士论文专项资金项目(No.200331);北京市自然科学基金(No.2072004);北京工业大学111人才工程基金计划等资助项目

摘　　要：La2Zr2O7(LZO)过渡层以其独特的物理化学性质越来越受到人们的关注。本文以乙酰丙酮镧和乙酰丙酮锆为前驱盐,丙酸为溶剂配置前驱液,用化学溶液方法(CSD)在具有立方织构的Ni-5at%W基底上制备了LZO过渡层薄膜。研究了前驱液成分、性质以及退火温度对LZO成相以及取向的影响。用常规XRD和X射线四环衍射仪分析了LZO薄膜的相成分和织构。结果显示,在1050℃下退火可以获得强立方织构的LZO薄膜,其中(222)峰的Phi扫描半高宽值为8.95°;(400)峰的Chi扫描半高宽值为6.8°。用高分辨扫描电子显微镜(FE-SEM)观察到LZO薄膜表面均匀致密,没有裂纹和空洞。Recent years, La2Zr2O7 （LZO） used as a buffer layer in coated conductors is paid more and more attention due to its unique physical and chemical properties worldwide. This article presents the result of the LZO buffer layer deposited on the cubic textured Ni-5at% W substrate by chemical solution deposition（CSD）. The precursor solution was prepared by using the aeetylaeetone lanthanum and the aeetylaeetone zirconium as precursor salts, and the propionie acid as a solvent. The characteristic of the precursor solution and the influence of the annealing temperature on forming the phase and the orientation of LZO buffer film were investigated by analyzing the data of UF-IR spectra of the LZO solution, the data of the XRD pattens and the SEM images of the films, respectively. It was found that the cubic texture in the LZO buffer layer was obtained when annealing at 1050℃. The values of full width at half maximum （FWHM） of （222） Phi scan is 8.95°, （400） Chi scan being 6.8°, respectively, which implies the sharpness of the texture in the as obtained buffer films. The SEM pictures observed by high resolution electron microscope show that the surface of the LZO buffer layer is smooth, dense and homogenous with free-crack and free-hole.

关 键 词：化学溶液方法 LZO薄膜 过渡层 立方织构 涂层导体 

分 类 号：TM26[一般工业技术—材料科学与工程]