ZnO本征半导体的点缺陷机制分析  

Study on Crystal Defects of Undopped ZnO Semiconductor

作　　者：贺永宁[1] 武明堂[1] 朱长纯[1] 

机构地区：[1]西安交通大学电子与信息工程学院电子科学与技术系,西安710049

出　　处：《人工晶体学报》2007年第6期1416-1421,共6页Journal of Synthetic Crystals

基　　金：985平台建设培植项目;西安交通大学自然科学基金

摘　　要：本文根据Kroger的氧化物点缺陷拟化学平衡方法对ZnO半导体中主要点缺陷的高温热平衡浓度进行了分析和计算,在此基础上依据快速冷却条件下的缺陷"冻结"特征,揭示了室温下ZnO半导体中的亚稳态缺陷状态和载流子分布特征,从而合理揭示了ZnO晶体中点缺陷态和导电机制的依赖关系。ZnO, as a wide-band gap semiconductor, has become a new research locus in the field of ultraviolet optoelectronic semiconductors recently. In the paper, the equilibrium concentrations of main points defects in ZnO semiconductor at high temperature, such as sintering temperature and heattreatment temperature, are theoretically investigated by the Kroger＇s defect chemistry method for oxide semiconductor. Then the hypothesis that the defects are ＂frozen＂ when ZnO semiconductor cooled rapidly to the room temperature was adopted to estimate the quantities of semi-equilibrium defects and the carriers distribution at room temperature. The weak n-type conductivity and the green photoluminescence of undoped ZnO semiconductors at room temperature are explained according the calculated results.

关 键 词：ZnO半导体 点缺陷化学 电学性质 

分 类 号：TB43[一般工业技术]