基于TCAD软件的单层多晶EEPROM器件模拟分析  

Simulation Analysis of Single Poly EEPROM Device Based on TCAD

作　　者：邓勇[1] 宣晓峰[1] 许高斌[1] 杨明武[1] 

机构地区：[1]合肥工业大学理学院,合肥230009

出　　处：《半导体技术》2008年第1期15-18,共4页Semiconductor Technology

基　　金：安徽省自然科学基金资助项目(05040202);安徽省教育厅自然科学重点科研计划项目资助(2006KJ026A)

摘　　要：利用TCAD软件对单层多晶EEPROM器件特性进行了模拟分析,介绍了单层多晶EEPROM存储单元结构与原理的基础,针对TCAD软件中模拟分析单层多晶EEPROM器件特性时存在的困难,提出了一种两个MOS管外加电阻的等效模型来替代单层多晶EEPROM存储单元结构进行等效模拟。通过编程模拟了单层多晶EEPROM器件性能,模拟分析得到的特性曲线与理论曲线能较好吻合,验证了等效模型方案的可行性。Simulation analysis of the device performance of single poly EEPROM was made based on TCAD. The structure and principle of single poly EEPROM memory were introduced. To overcome the difficulties in simulating the performance of single poly EEPROM device in TCAD, a equivalent simulation model with double MOS components and resistance was EEPROM structure, characteristic curves feasible , and used to replace the single poly device performance was simulated through programming. Numerical results show that the of the device agree well with theoretical results, the proposed equivalent model is proved

关 键 词：单层多晶EEPROM TCAD软件 等效模型 器件模拟 

分 类 号：TN402[电子电信—微电子学与固体电子学] TP343[自动化与计算机技术—计算机系统结构]