SiGe HBT低频噪声PSPICE模拟分析  

PSPICE Model and Simulation for Low-Frequency Noise of SiGe HBTs

作　　者：沙永萍[1] 张万荣 

机构地区：[1]北京工业大学电控学院,北京100022

出　　处：《半导体技术》2008年第1期51-55,共5页Semiconductor Technology

基　　金：北京市教委科技发展计划项目(KM200710005015);北京市属市管高校中青年骨干教师培养计划项目(102(KB)-00856);国家自然科学基金项目(60376033);北京市优秀跨世纪人才基金项目(67002013200301)

摘　　要：对SiGe HBT低频噪声的各噪声源进行了较全面的分析,据此建立了SPICE噪声等效电路模型,进一步用PSPICE软件对SiGe HBT的低频噪声特性进行了仿真模拟。研究了频率、基极电阻、工作电流和温度等因素对低频噪声的影响。模拟结果表明,相较于Si BJT和GaAs HBT,SiGe HBT具有更好的低频噪声特性;在低频范围内,可通过减小基极电阻、减小工作电流密度或减小发射极面积、降低器件的工作温度等措施来有效改善SiGe HBT的低频噪声特性。所得结果对SiGe HBT的设计和应用有重要意义。An analysis of SiGe HBTs Low-frequency noise sources was made, and based on it, the SPICE noise equivalent eireuit model for SiGe HBTs was presented. The low-frequency noise characteristics of SiGe HBT were simulated by PSPICE software. The effects of frequency, base resistance, operating current and temperature on low-frequency noise were investigated. The simulation results indicate that SiGe HBTs have better low-frequency noise characteristics than Si BJT and GaAs HBT. The low-frequency noise characteristics of SiGe HBTs can be improved by some approaches such as reducing the base resistance, decreasing the operating current density or the emitter area and lowering the operating temperature of the devices. The results are significant for design and application of SiGe HBTs.

关 键 词：SIGE HBT 低频噪声 PSPICE 模拟 

分 类 号：TN385[电子电信—物理电子学]