Properties of Light Emission Spectrumof Double-barrier Tunnel Junction  

作　　者：WANG Mao-xiang NIE Li-cheng ZHANG You-wen YU Jian-hua LIU Ke-lin 

机构地区：[1]School of Management and Engineering, Nanjing University, 210093 Nanjing, CHN [2]School of Electronic Science and Engineering, Southeast University, 210096 Nanjing, CHN

出　　处：《Semiconductor Photonics and Technology》2007年第4期243-246,共4页半导体光子学与技术（英文版）

基　　金：National Natural Science Foundation of China(69576006)

摘　　要：Fabricated are the double-barrier light emission tunnel junctions successfully. Introduced are the fabrication process and light emission characteristics. The spectra of the junctions are measured and analyzed especially. Their spectrum wavelength including main wave peak(locates at 450 nm^500 nm) of the double-barrier junction shows a "blue shift" in comparison with that of the single-barrier Metal/Insulator/Semiconductor(MIS) or Metal/Insulator/Metal(MIM) junction(wave peak locates at 620 nm^740 nm). This phenomenon should be due to the occurrence of the electron resonant tunneling in the double-barrier junction.Fabricated are the double-barrier light emission tunnel junctions successfully. Introduced are the fabrication process and light emission characteristics. The spectra of the junctions are measured and analyzed especially. Their spectrum wavelength including main wave peak（locates at 450 nm～500 nm） of the double- barrier junction shows a ＂blue shift＂ in comparison with that of the single-barrier Metal/Insulator/ Semiconductor（MIS） or Metal/Insulator/Metal（MIM） junction（wave peak locates at 620 nm-740 nm）. This phenomenon should be due to the occurrence of the electron resonant tunneling in the double-barrier junction.

关 键 词：tunnel junction DOUBLE-BARRIER light emission spectrum electron resonant tunneling 

分 类 号：O484.4[理学—固体物理]