Photovoltaic Response Characteristics of GaAs Photoconductive Switches Under High Gain Mode  

作　　者：DAI Hui-ying SHI Wei 

机构地区：[1]Department of Applied Physics, Xi＇an University of Technology, Xi＇an 710084, CHN [2]Department of Applied Mathematics and Physics, Air Force Engineering University, Xi＇an 710038, CHN

出　　处：《Semiconductor Photonics and Technology》2007年第4期280-282,293,共4页半导体光子学与技术（英文版）

基　　金：National Natural Science Foundationof China(50477011)

摘　　要：Given is the experiment results in which the laser pulses of 1 046 nm and 532 nm are used to trigger the semi-insulation GaAs photoconductive semiconductor switch(PCSS) with an electrode distance of 4 mm. And made is an analysis of the switchs photovoltaic response characteristics under the high gain mode when the biased field is bigger than the Geng effect field. Also a theory is presented that the main reason for the photovoltaic pulse response delay is the transmission of charge domain, caused by the presence of EL2 energy level in the chip material. Finally, the transmission time of charge domain is calculated and a result that inosculates with the experiment is attained.Given is the experiment results in which the laser pulses of 1 046 nm and 532 nm are used to trigger the semi-insulation GaAs photoconductive semiconductor switch（PCSS） with an electrode distance of 4 mm. And made is an analysis of the switch＇s photovoltaic response characteristics under the high gain mode when the biased field is bigger than the Geng effect field. Also a theory is presented that the main reason for the photovoltaic pulse response delay is the transmission of charge domain, caused by the presence of EL2 energy level in the chip material. Finally, the transmission time of charge domain is calculated and a result that inosculates with the experiment is attained.

关 键 词：photoconductive switch EL2 energy level electric charge domain photovoltaic response characteristic 

分 类 号：TN201[电子电信—物理电子学]