掺杂V_2O_5对MgNb_2O_6介电陶瓷工艺和性能的影响  

Effects of V_2O_5 on Sinterability and Properties of MgNb_2O_6 Dielectric Ceramics

作　　者：赵永乐[1] 赵能伟[1] 刘林艳[2] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京211100 [2]武汉理工大学材料科学与工程学院,湖北武汉430070

出　　处：《佛山陶瓷》2007年第12期12-15,共4页Foshan Ceramics

摘　　要：本文采用固相反应法常压烧结制备MgNb2O6粉末,研究了添加不同质量分数的V2O5对MgNb2O6微波介电陶瓷的烧结工艺和介电性能的影响。并运用XRD、SEM和LCR对试样显微组织和性能进行了分析。结果表明:添加一定量的V2O5能够有效地降低MgNb2O6介电陶瓷的烧结温度,提高试样的致密度、频率温度系数及介电常数。当V2O5添加量为1.0wt%,且在1175℃烧结条件下获得的MgNb2O6陶瓷性能最佳,其性能参数分别为:εr=28,tanδ=0.00361,τf=54.64ppm·℃-1。In this paper, the effects of V2O5 additives on the sinterability and dielectric properties of MgNb2O6 ceramics were investigated. The dielectric ceramics MgNb2O6 was prepared by pressureless sintering method. Their microstructures had been analyzed by XRD, SEM and their dielectric properties had been analyzed by LCR testing analyzer. The experiment results revealed that V2O5 additives can lower the sintering temperature, increase the dielectric constant,higher their density and improve the temperature coefficient of resonant frequency of MgNb2O6 ceramics. The 1.0wt%V2O5-doped MgNb2O6 ceramics sintered at 1175℃ had the dielectric properties： εr=28,tanδ=0. 00361, τf=-54.64ppm·℃^-1. When the additives more than 2.0wt%,the MgNb2O6 ceramics had new phase produced.

关 键 词：MgNb2O6介电陶瓷 V2O5 烧结温度 介电性能 

分 类 号：TQ174.1[化学工程—陶瓷工业]