非掺SI-GaAs单晶热处理的研究  

Study on the Thermal Treatment of the Undoped SI GaAs Crystal

作　　者：徐玉忠[1] 唐发俊[1] 杨连生 

机构地区：[1]电子工业部第四十六研究所

出　　处：《半导体情报》1997年第5期36-38,50,共4页Semiconductor Information

摘　　要：采用闭管Ａｓ气氛保护高－低－中温热处理方法进行非掺ＳＩ－ＧａＡｓ单晶热处理的研究，结果表明晶体的特性有明显的改善，一般晶体的迁移率可提高一倍以上，在Φ３英寸非掺ＳＩ－ＧａＡｓ单晶研究中，其晶体的电阻率不均匀性≤１５％；ＥＬ２ＲＳＤ≤５％；ＰＬ－Ｍａｐ－ｐｉｎｇ≤９％。In this paper,the thermal treatment of undoped SI GaAs crystal by high low mid temperature annealing technologies in the ambient of As atomsphere is studied.The results showed that the characteristics of the crystal were greatly improved and the mobility of the common crystal was increased by a factor of 2 or more.For 3 inch undoped SI GaAs crystal,its inhomogenity is better than 15% for resistivity,RSD≤5% for EL2 and PL mapping≤9%.

关 键 词：非掺SI-GaAs 热处理工艺 砷化镓 单晶 

分 类 号：TN304.23[电子电信—物理电子学]