纳米射频CMOS混频器的研究  

Design of the RF COMS Mixer

作　　者：夏华灿[1] 张流强[1,2] 王国波[1] 

机构地区：[1]重庆大学光电学院微系统中心,重庆400044 [2]重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《纳米科技》2007年第6期24-27,共4页

摘　　要：介绍了混频器的工作原理、性能指标及几种重要的混频器结构。设计了以Gilbert型为核心的双端差分对混频器，使用TSMC的0．18μm CMOS工艺库，本振信号为2．25GHz，射频信号为2．5GHz；借用安捷伦公司的ADS软件模拟，模拟结果变频增益为-10dBm，双边带噪声为58．6dB，输入1dB压缩点为11dBm，同时端口隔离度也比较高。该混频器适用于中高频段的发射机。Basic operating principle, performance of CMO S mixer and some kinds of mixer structure are introduced. A two port differ balanced mixer based on the Gilbert cell is designed. This mixer was fabricated using a TSMC 0.18μm CMOS technology. The LO and RF frequency is 2.25GHz and 2.5GHz, simulated with the ADS software. The described mixer has achieved a conversion gain of -10 dB, double side noise figure of 58.6 dB, 1 dB compression point of 11 dBm, also has a high port Isolation. The described mixer is used for the middle or high frequency transmitter.

关 键 词：RFIC 混频器 集成电路 CMOS 

分 类 号：TN303[电子电信—物理电子学]