蓝宝石衬底上AlGaN外延材料的低压MOCVD生长  

Growth of AlGaN Epilayers on Sapphire by Low Pressure Metal Organic Chemical Vapor Deposition

作　　者：赵红[1] 邹泽亚[1] 赵文伯[1] 杨晓波[1] 刘挺[1] 廖秀英[1] 王振[1] 周勇[1] 刘万清[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2007年第6期800-803,共4页Semiconductor Optoelectronics

摘　　要：采用低温AlN成核层在1180℃温度下在(0001)蓝宝石衬底上用低压MOCVD设备生长了AlGaN外延层。Al组分高达0.6、厚度大于1μm的AlGaN外延层表面光亮,晶体质量较好,(0002)X射线衍射回摆曲线半峰宽FWHM为853弧秒。当反应室气压从5×103Pa降到2×103Pa后,AlGaN外延层的生长速率和固相Al组分都显著提高。AlGaN epilayers were grown on sapphire（0001） by low pressure metal organic chemical vapour deposition at substrate temperature of 1 180 ℃ without GaN buffer layer, utilizing low temperature AlN nucleation layer. Specular surfaces were obtained on the epilayers with Al composition up to 0.6, thichness greater than 1μm, and X-ray diffraction rocking curve FWHM of （0002） reflection around 853 arcsec. The reduction of growth pressure from 50 mbar to 20 mbar induces remarkable increases of both growth rate and Al composition in the solid.

关 键 词：MOCVD ALGAN 低温核化层 

分 类 号：TN304.054[电子电信—物理电子学]