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机构地区:[1]武汉大学物理科学与技术学院,湖北武汉430072
出 处:《现代电子技术》2008年第2期54-57,共4页Modern Electronics Technique
摘 要:设计了一种适合射频电子标签的高精度时钟产生电路,在分析影响输出频率稳定性各因素的基础上,针对标签电路低功耗宽工作环境的要求,提出一种全CMOS结构带隙基准做偏置的电流受限型环形振荡器。全MOS自偏置PTAT迁移率和阈值电压互补偿带隙基准源的设计,使时钟电路受电源电压和温度的影响极小。全电路采用TSMC 0.18μmCMOS工艺实现。HSpice仿真结果表明:电源电压为1.2~2 V,温度从-10^+70℃变化时,带隙基准温度系数和电源电压抑制比分别为12 ppm/℃和59 dB,时钟稳定度在±2.5%以内,电路平均功耗仅为4μw。A high precision CMOS clock generator for UHF RFID tag is described for the requirement of low power and wide work environment. Based on analysis of the factors which affect the output frequency stability, an improved all- CMOS current- starved ring oscillator with a bandgap reference as bias is proposed in paper. Mutual compensation of mobility and threshold voltage effects is used in the all - MOS self PTAT bandgap reference makes frequency varies a little with power supply voltage and temperature. The circuit is implemented in a standard TSMC 0.18μm CMOS process. Simulation results using HSpiee show that PSRR and temperature coefficient of bandgap reference is 59 dB and 12 ppm/℃. The standard output frequency of the clock generator is 320 kHz, the frequency stability is within ± 2.5 %. when temperature ranging from -10 ℃ to 70℃ and supply voltage from 1. 2- 2 V, The average power dissipation is 4μw.
关 键 词:时钟产生电路 环形振荡器 PTAT带隙基准 低功耗
分 类 号:TN710[电子电信—电路与系统]
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