在hBN—Li_3N—B体系中合成黑色立方氮化硼  

Synthesis of black cBN single crystal in hBN-Li_3N-B system

作　　者：杜勇慧[1] 张铁臣[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室

出　　处：《材料研究学报》2007年第6期669-672,共4页Chinese Journal of Materials Research

摘　　要：在高温高压条件下在hBN-Li_3N-B体系中合成黑色立方氮化硼,研究了添加B的影响.结果表明,在合成的富硼cBN晶体中,没有其它杂质;体系中加入B使合成出的晶体晶形相更完整.过量的B进入晶体是晶体颜色由黄色变成黑色主要原因,硼的进入抑制了cBN晶体沿〈111〉方向生长而有利于沿〈100〉方向生长,由原来的板状晶体变成类八面体状或类球形晶体.用掺B的方法合成的黑色晶体比未掺B的黄色晶体具有更小的残余应力,破碎强度更高.The synthesis of black cBN crystal in hBN-Li3N-B system and the influence of boron additions under high pressure and high pressure was investigated in this paper. The results show that no other impurities appear in B-rich cBN crystals and the morphology of synthetic black cBN single crystals were more integrated with B additions. The excessive boron entering the crystals was the main reason that the color of cBN crystals turns yellow into black. The entry of boron restrain the growth of cBN crystal along 〈111〉 direction while preferred along 〈100〉 direction, which make the morphology of cBN crystals change from truncated thick plank into relativly integrated octahedron. The residual stress of black cBN with B additions is less than that of yellow cBN without B additions.

关 键 词：材料合成与加工工艺 立方氮化硼 硼 拉曼光谱 应力 

分 类 号：TB321[一般工业技术—材料科学与工程]