1．3μm GeSi/Si异质结波导光栅耦合器的设计  

Design of 1.3μm GeSi/Si Heterojunction Waveguide Grating Coupler

作　　者：徐勤昌[1] 刘淑平[1] 

机构地区：[1]太原科技大学,山西太原030024

出　　处：《红外》2008年第1期24-27,共4页Infrared

基　　金：山西省自然基金(2007011047)

摘　　要：分析了导模-辐射模耦合理论和利用经塔米尔的传输回路方法论改造过的扰动理论进行解析的结果。根据上述理论对1.3μm GeSi/Si异质结波导光栅耦合器波导层的厚度、槽形、长度、宽度、周期、槽深等做了近似的设计。The coupling theory of the guided mode-radiating mode and the analytical results obtained by using the disturbance theory rebuilt with Tamir＇s methodology of transmission circuit are analyzed. According to the above theories, the thickness, groove shape, length, width, period and groove depth of the waveguide layer of a 1.3μm GeSi/Si heterojunction waveguide grating coupler is approximately designed.

关 键 词：光栅耦合器 GeSi/Si异质结 辐射系数 耦合系数 

分 类 号：TN253[电子电信—物理电子学]