退火温度对CsI薄膜闪烁特性的影响  

Effects of annealing temperature on scintillation properties of thermally evaporated CsI films

作　　者：程峰[1] 钟玉荣[2] 王宝义[2] 王天民[3] 魏龙[2] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000 [2]中国科学院高能物理研究所,北京100049 [3]北京航空航天大学理学院,北京100083

出　　处：《核技术》2008年第1期15-18,共4页Nuclear Techniques

摘　　要：采用热蒸发法在玻璃衬底上沉积CsI薄膜,然后进行不同温度的真空热处理。用X射线衍射仪、扫描电子显微镜对CsI薄膜样品进行分析,测得^(241)Am的脉冲高度谱,通过单光子法测量样品的光产额。结果表明,该CsI薄膜沿(200)晶面择优取向生长。退火温度对CsI薄膜的晶体结构和闪烁性能有很大的影响。CsI薄膜经过250℃退火后,(200)晶面衍射峰明显增强,结晶状态最佳,光产额最高,而退火温度达400%时,薄膜结构发生显著变化,闪烁性能急剧下降。CsⅠ films were prepared on glass substlates by thermal evaporation and annealed under various temperature. Structure and scintillation properties of films were examined using X-ray diffraction, scanning electron microscope and scintillation pulse height spectrometry. The results show that the crystalline structure and scintillation properties of the CsI films depend on the annealing temperature. The samples annealed at 250℃ have a good crystalline state and scintillation properties. As the annealing temperature goes up to 400℃, the light output of samples decreases seriously.

关 键 词：CsⅠ薄膜 热蒸发 闪烁性能 

分 类 号：O484.4[理学—固体物理] TL812.1[理学—物理]