氢键链中离子缺陷和键缺陷的孤子统计理论  

STATISTICAL THEORY OF SOLITON FOR IONIC AND BONDING DEFECTS IN HYDROGENBONDED CHAINS

作　　者：周斌[1] 徐济仲[1] 

机构地区：[1]湖北大学压电陶瓷技术研究所

出　　处：《湖北大学学报（自然科学版）》1997年第2期142-147,共6页Journal of Hubei University：Natural Science

摘　　要：以双参数双周期势的二分量孤子模型为基础，利用理想气体唯象近似的方法，研究了氢键链中离子缺陷和键缺陷的统计问题，得到了离子型和取向型孤子偶密度。On the basis of the twocomponent soliton model with a twoparameter doubly periodic potential, using the method of idea gas phenomenology approximate, the statistical questions of ionic and bonding defects in hydrogenbonded chains are studied. The expressions of the density of ionic and bonding soliton pairs are obtained, and the mean nucleation rates of the thermal soliton pairs are calculated.

关 键 词：离子缺陷 键缺陷 孤子统计 孤子密度 氢键链 

分 类 号：O483[理学—固体物理] O414.2[理学—物理]