Nd掺杂Bi_4Ti_3O_(12)-SrBi_4Ti_4O_(15)陶瓷的电性能  

Electrical properties of Nd-doped Bi_4Ti_3O_(12)-SrBi_4Ti_4O_(15) ceramics

作　　者：顾世浦[1] 王伟[1] 陈小兵[1] 何军辉[1] 

机构地区：[1]扬州大学物理科学与技术学院,江苏扬州225002

出　　处：《扬州大学学报（自然科学版）》2007年第2期23-26,共4页Journal of Yangzhou University：Natural Science Edition

基　　金：国家自然科学基金(10274066);江苏省自然科学基金(BK2005052)

摘　　要：Nd等价取代Bi_4Ti_3O_(12)-SrBi_4Ti_4O_(15)的A位,形成SrBi_(8-x)Nd_xTi_7O_(27)(x=0.00～1.50)共生陶瓷.结果表明:Nd掺杂未改变晶体的共生结构,样品剩余极化(2P_r)在掺杂量x=0.50时取得极大值,为32.3×10^(-2) C·m^(-2),比未掺杂时增加了70%,而矫顽场则从未掺杂时的90.5×10~5 V·m^(-1)上升为103×10~5 V·m^(-1).Nd掺杂使得样品的居里温度(t_C)有所下降,x=0.50时的t_C为538℃.掺杂使得样品的压电性能明显改善,压电系数d_(33)从未掺杂时的6 pC·N^(-1)增加到x=0.50时的11 pC·N^(-1).Ferroelectric, dielectric and piezoelectric properties of Nd-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ceramics are investigated. It is found that a single phase of randomly-oriented bismuth layerstructured is obtained with Nd content. The remanent polarization is increased from nondoped 19.1 × 10^-2 C · m^-2 up to 32.3×10^-2 C· m^-2 at x=0. 50 and the coercive field is increased a little bit. The temperature dependence of dielectric permittivity （ε） for Nd-doped Bi4Ti3O12-SrBi4Ti4O15 shows the Curie temperature （to） decreases with increasing Nd content and tc= 538 C at x= 0.50. Piezoelectric coefficient d33 is increased from nondoped 6 pC · N^-1 to 11 pC · N 1 at x=0.50. d

关 键 词：掺杂 剩余极化 居里温度 压电系数 

分 类 号：O482.54[一般工业技术—材料科学与工程] TM271[理学—固体物理]