磁量子结构中电子自旋极化输运性质的研究  

Properties of Spin-Polarized Electron Transport in the Magnetic Quantum Structure

作　　者：李业华[1] 王海镔[1] 高峰[2] 唐振坤[1] 王玲玲[1] 

机构地区：[1]湖南大学物理与微电子科学学院 [2]衡阳师范学院物理与电子信息科学系,湖南衡阳421008

出　　处：《衡阳师范学院学报》2007年第6期59-63,共5页Journal of Hengyang Normal University

基　　金：高等学校博士点学科专项基金资助(20050532013)

摘　　要：研究了双磁垒量子结构中,磁场强度和偏压大小对电子自旋极化输运的影响。结果表明:零偏压下,电子在反平行等强磁垒结构中输运不会产生自旋极化;电子传输的阈值能量随磁场强度或偏置电压的增大而增大;在一定的磁场强度和偏压大小下,比较由半导体InAs和GaAs两类材料构成的量子结构中电子输运自旋极化度,发现它们的电子输运自旋极化度都随入射能量的增大而呈振荡衰减趋势,朗德有效因子高的InAs材料比GaAs的自旋极化度高出一个数量级。The effects of magnetic field and bias voltage on spin polarized electron transport through a dual magnetic barriers quantum structure are investigated in this paper. The results show that： （i） the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage; （ii） the energy threshold of electronic transmission are in- crease with the increases of magnetic field or bias voltage; （iii） the comparison of the electron spin polarization degree is made between the electron transport through GaAs and through InAs quantum structure, and find that though the spin polarization degree oscillation decrease with the increase of the incidence energy, the spin polarization degree of InAs is an order of magni- tude higher than that of GaAs because of the higher Lande effective factor.

关 键 词：磁量子结构 电子输运 自旋极化 

分 类 号：O431.1[机械工程—光学工程]