WO_3掺杂NiO的气敏性能研究  

Study on gas sensitivity of NiO doped with WO_3

作　　者：赵晓华[1] 安娜[1] 娄向东[1] 王晓兵[1] 楚文飞[1] 彭传云[1] 

机构地区：[1]河南师范大学化学与环境科学学院,河南新乡453007

出　　处：《传感器与微系统》2008年第1期58-60,共3页Transducer and Microsystem Technologies

基　　金：河南省科技攻关计划资助项目(0524250038)

摘　　要：用水热法制备出NiO纳米粉体,对其进行了WO3系列掺杂。利用XRD对产物晶相结构进行表征,测试了掺杂材料的气敏性能。结果表明:适量WO3的掺杂明显改善了NiO材料的气敏性能,其中,掺杂质量分数为6%的气敏元件性能最好,350℃时对Cl2的灵敏度可达到37.5,200℃时对H2S的灵敏度可达30.4。说明该元件在不同温度下对不同气体具有选择性,且该元件对H2S响应恢复快。The nano powder NiO is prepared by hydrothermal methord, and is doped with WO3. The microstructure is analyzed by XRD. The gas sensitivity of doped materials is detected. The resuhs show that the sensitivity of WO3-doped NiO sensor is higher than pure NiO sensor and the sensitivity of 6 % quality fraction WO3-doped NiO is best,which highest sensitivity to C12 is 37.5 at 350 ℃ ,while its sensitivity to H2S is 30.4 at 200 ℃. So the sensor has selectivity to different gases at different temperature. Also the sensor has sooner response and recovery to H2 S.

关 键 词：氧化镍 三氧化钨 掺杂 气敏性能 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]