硫化的激光器腔面上溅射ZnS钝化膜的研究  

Research on ZnS passivating film with magnetron sputtering on sulfureted laser cavity surfaces

作　　者：刘春玲[1] 王春武[2] 么艳平[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光器国家重点实验室,吉林长春130022 [2]吉林师范大学信息技术学院,吉林四平136000

出　　处：《光电子．激光》2008年第1期14-16,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60477010,60476026)

摘　　要：提出了一种新的激光器腔面钝化方法。先用(NH4)2S溶液硫化解理后的激光器腔面,然后使用磁控溅射方法对激光器的前腔面镀ZnS钝化膜、后腔面镀Si/SiO2高反射膜。ZnS钝化层光学厚度为λ/4,在中心波长为808nm处透过率可达95.5%。钝化前激光器的光学灾变损伤(COD)阈值为1.6W,钝化后为2.0W,提高了25%倍;未镀膜的激光器阈值电流为0.25A,经硫化再镀ZnS后阈值电流为0.20A,降低了20%。实验结果表明,经硫化后溅射ZnS对激光器腔面具有良好的钝化和增透效果。A new passivation technology of semiconductor laser cavity surfaces is proposed, that is, the front cavity surfaces of laser chips that are sulfureted by （NH4）2 S are coated with ZnS film by magnetron sputtering,and the back cavity surfaces are sputtered by Si/SiO2 HR films. The optical thickness of ZnS passivation film is λ/4 ,whose transmissivity T is 95.5% at 808 nm wavelength. Laser catastrophic optical damage（COD） threshold is 1.6 W before passivation,and its COD threshold is 2.0 W after passivation,which is almost increased by 25%. Laser threshold current is 0. 25 A before passivation,and its threshold current is 0. 20 A after passivation. The results indicate that the ZnS passivation film sulfureted by （NH4）2 S takes on better passivation and antireflecting effect.

关 键 词：半导体激光器 光学灾变损伤(COD) 钝化 硫化 ZNS 

分 类 号：TN248.4[电子电信—物理电子学]