Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition  

基于共沉积技术的AgTCNQ的有机双稳态器件(英文)

作　　者：涂德钰[1] 姬濯宇[2] 商立伟[1] 刘明[1] 王丛舜[1] 胡文平[2] 

机构地区：[1]中国科学院微电子研究所纳米加工及新器件集成研究室,北京100029 [2]中国科学院化学研究所有机固体重点实验室,北京分子科学国家实验室,北京100080

出　　处：《Journal of Semiconductors》2008年第1期50-54,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展计划(批准号:2006CB806204);国家自然科学基金(批准号:60676001,60676008,60236010,60290081)资助项目~~

摘　　要：The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ （TCNQ-- 7,7,8,8-tetracyanoquinodimethane） thin-film layer was sandwiched in a Ti/AgTCNQ/Ati crossbar structure array as organic bistable devices （OBD）.A reversible and reproducible memory switching property,caused by intermolecular charge transfer （CT） in the AgTCNQ thin-film, was observed in the organic bista- ble devices. The positive threshold voltage from the high impedance state to the low impedance was about 3.8-5V, with the reverse phenomenon occurring at a negative voltage of - 3.5- - 4. 4V,lower than that with a CuTCNQ active layer. The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.采用共沉积技术制备了AgTCNQ薄膜,并进行了红外、紫外光谱表征.利用微电子工艺制备了基于AgTCNQ薄膜的有机双稳态器件.研究发现,Ti/AgTCNQ/Au双稳态器件具有可逆、可重复的开关存储特性.将器件从初始的高阻态转变为低阻态的正向开关阈值电压为3.8～5V,将低阻态转变为高阻态的负向阈值电压仅为-3.5～-4.4V,与通常的CuTCNQ器件相比较小.这种基于AgTCNQ交叉结构的有机双稳态器件可应用于非易失性有机存储器.

关 键 词：organic electronics bistable switching crossbar memory 

分 类 号：TN305[电子电信—物理电子学]