Low Power Design Orienting 384×288 Snapshot Infrared Readout Integrated Circuits  

面向384×288面阵型红外读出电路的低功耗设计(英文)

作　　者：刘丹[1] 鲁文高[1] 陈中建[1] 吉利久[1] 赵宝瑛[1] 

机构地区：[1]北京大学微电子学系,北京100871

出　　处：《Journal of Semiconductors》2008年第1期93-98,共6页半导体学报（英文版）

摘　　要：This paper presents a low power design for a 384 x 288 infrared （IR） readout integrated circuit （ROIC）. For the character of IR detector （ ro ≈ 100kΩ, Iint ≈ 100nA）, a novel pixel structure called quad-share buffered direct injection （QSBDI） is proposed and realized. In QSBDI,four neighbor pixels share one buffered amplifier,which creates high injection efficiency, a stable bias, good FPN performance, and low power usage. This ROIC also supports two integration modes （integration then readout and integration while readout）, two selectable gains, and four window readout modes. A test 128 × 128 ROIC is designed,fabricated,and tested. The test results show that the ROIC has good linearity. The peak to peak variance of the sub array is about 10mV. The power of pixel stage is only lmW,and the total power dissipation is 37mW at a working frequency of 4MHz.介绍了一种面向384×288CMOS面阵性红外读出电路的低功耗设计.针对探测器的特点(输出阻抗约100kΩ,积分电流约100nA),新提出并实现了一种四像素共用BDI的QSBDI(Quad-shareBDI)像素结构.在QSBDI结构中,4个相邻的像素共用一个反馈放大器,从而实现了高注入效率、稳定的偏置、较好的FPN特性和低功耗.另外该384×288读出电路还支持积分然后读出、积分同时读出功能,还有两个可选择的增益以及4种窗口读出模式.128×128的测试读出电路已完成设计、加工和测试.电路使用CSMC0.5μmDPTM工艺流片,测试结果表明在每个子阵列输出的峰峰差异仅为10mV.在4MHz的工作频率下,像素级引入的功耗仅为1mW,芯片的整体功耗也只有37mW,实现了低功耗设计.

关 键 词：IR ROIC QSBDI IWR ITR low power WINDOWING 

分 类 号：TN21[电子电信—物理电子学]