Fe-Si-C体系合成金刚石的生长特性  

Growth Characteristics of Synthetic Diamond in Fe-Si-C System

作　　者：郑友进[1] 马红安[1] 周林[1] 秦杰明[1] 贾晓鹏[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室

出　　处：《吉林大学学报（理学版）》2008年第1期120-122,共3页Journal of Jilin University:Science Edition

基　　金：国家自然科学基金(批准号:50572032)

摘　　要：研究高温高压下掺Si合成金刚石,并与Fe-C体系合成的金刚石进行比较.实验结果表明,体系中掺入Si,合成的晶体颜色比Fe-C体系合成的晶体颜色浅,在相同的合成时间内,Fe-Si-C体系合成金刚石的粒度比Fe-C体系合成金刚石的粒度小;通过X射线衍射(XRD)可见,该体系产生FeSi和Fe3C两种新物质.By high pressure and high temperature （HPHT） method, the study on introducing Si into diamond synthesis was carried out. Experimental results indicate that owing to the introduction of Si, the color of diamonds from Fe-Si-C system appears to be shallower than that from Fe-C system. And within the same synthetic time, the crystal size of diamonds from Fe-Si-C system is smaller than that from Fe-C system. From X-ray data, we can find that there are two kinds of new compounds, FeSi and Fe3C, in the Fe-Si-C system.

关 键 词：硅 高温高压 金刚石 粒度 

分 类 号：TQ164[化学工程—高温制品工业]