p型透明导电SrCu_2O_2薄膜电学性能的研究进展  

Recent Advances in Electrical Properties of p-SrCu_2O_2 Transparent Conductive Oxides Films

作　　者：高岭[1] 方亮[1] 董建新[1] 彭丽萍[1] 陈勇[1] 汪立文[1] 

机构地区：[1]重庆大学数理学院应用物理系重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《材料导报》2007年第F11期322-325,共4页Materials Reports

基　　金：重庆市自然科学基金(CSTC20054718);教育部"新世纪优秀人才支持计划"(NCET-05-0764);中国博士后科学基金(200537544)资助

摘　　要：SrCu_2O_2是一种新型可掺杂为p型导电的直接带隙透明氧化物半导体,其沉积温度低,基于p-SrCu_2O_2和n-ZnO薄膜已经成功制备出异质结透明近紫外发光二极管,预示着其广阔的应用前景。对SrCu_2O_2的能带结构进行了详细说明,分析了p型TCO的导电机理,并对影响SrCu_2O_2电学性能的因素及如何提高其导电性能进行了讨论。SrCu2O2 is a new kind of p-type TCO with a large direct band gap and can be prepared at low temperature. Based on p-SrCu2O2 and n-ZnO films,hetero-junctions transparent near-UV LEDs have been successfully developed, indicating its wide application prospect. In this paper, the band structure of SrCu2O2 and the conducting mecha nism of p-TCO are analyzed in detail. Factors affecting electrical properties of SrCu2O2 and how to improve its perform- ance are discussed.

关 键 词：SrCu2O2 透明导电膜 带隙 P型半导体 

分 类 号：TN304.21[电子电信—物理电子学] TN304.05