掺杂CuV_2O_6低温烧结(Zn_(0．65)Mg_(0．35))TiO_3微波陶瓷的研究  

Study on Low Temperature Sintered(Zn_(0.65)Mg_(0.35))TiO_3 MWDC Doped with CuV_2O_6

作　　者：姜红梅[1] 张树人[1] 周晓华[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《材料导报》2007年第F11期342-344,共3页Materials Reports

摘　　要：研究了烧结助剂CuV_2O_6对(Zn_(0.65)Mg_(0.35)TiO_3(ZMT)陶瓷结构及介电性能的影响。结果表明:添加CuV_2O_6可促进晶粒生长,使ZMT材料在较低的温度下烧结成瓷,且获得较好的微波介电性能;但添加量不宜过大,过量后烧结过程中形成的液相过多,不能均匀地分散在晶界处,不利于晶粒的充分生长;最佳CuV_2O_6的添加量为1.0wt%,添加后材料可在930℃烧结,介电性能为:ε_r=20.1,Q×f=24200(15GHz),τ_f≈-72.5×10^(-6)/℃,有望实现与银电极共烧。The effect of CuV2O6 additive on the structure and dielectric properties of （Zn0.65Mg0.35）TiOa （ZMT） ceramics is investigated. It is showed that doping of CuV2O6 in modest amount can improve the crystal growth of ZMT and lower sintering temperature. However, with excessive CuV2O6, liquid phases increase, which is harmful to the grain growth. Typically,the excellent microwave dielectric properties of Cr=20.1,Q×f=24200（15GHz）, t1≈-72.5 × 10^-6/℃ could be obtained for the l wt% CuV2O6-doped sample sintered at 930℃, which makes the application of multilayer microwave devices using Ag as internal electrode material promising.

关 键 词：低温烧结 ZnTiO3 MGTIO3 微波陶瓷 

分 类 号：TM22[一般工业技术—材料科学与工程]