聚酰亚胺为栅绝缘层的并五苯场效应晶体管  

Pentacene organic field-effect transistors with polyimide gate dielectric layer

作　　者：董茂军[1] 陶春兰[1] 张旭辉[1] 欧谷平[1] 张福甲[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《光电子．激光》2008年第2期161-163,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60676033)

摘　　要：以真空蒸发的有机半导体材料并五苯为有源层,以旋涂的聚酰亚胺作为栅绝缘层,以真空蒸发的Al为栅、源和漏电极,成功制作了顶接触式并五苯有机场效应晶体管(OFET)。测试表明,在源漏电压为70V时,器件的载流子迁移率μ为0.079cm2/V.s,器件的开关电流比为1.7×104.An organic field-effect transistor is achieved by the vacuum evaporation of pentacene as the active layer, the spin coating of polyimide as insulator layer,and the vacuum evaporation of aluminim as gate,source and drain electrodes respectively. The field-effect mobility of 0. 079 cm^2/V · s was tested at Vds equaling 70 V,and the on/off radio is up to 1.7× 10^4.

关 键 词：有机场效应晶体管(OFET) 并五苯 迁移率 聚酰亚胺 

分 类 号：TN321[电子电信—物理电子学]