Working Pressure Dependence of Properties of Al2O3 Thin Films Prepared by Electron Beam Evaporation  

作　　者：占美琼 吴中林 范正修 

机构地区：[1]Shanghai Second Polytechnic University, Shanghai 201209 [2]Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences, Shanghai 201800

出　　处：《Chinese Physics Letters》2008年第2期563-565,共3页中国物理快报（英文版）

摘　　要：The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold （LIDT） is measured by a Nd：YAG laser at 355 nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd：YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LIDT of Al2O3 thin film.The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold （LIDT） is measured by a Nd：YAG laser at 355 nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd：YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LIDT of Al2O3 thin film.

关 键 词：PULSARS x-ray spectra relativity and gravitation REDSHIFT 

分 类 号：O484.1[理学—固体物理]