Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique  

作　　者：白素媛 唐祯安 黄正兴 余隽 汪家奇 

机构地区：[1]Department of Electronic Engineering, Dalian University of Technology, Dalian 116024 [2]School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029

出　　处：《Chinese Physics Letters》2008年第2期593-596,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 59995550-5 and 90607003.

摘　　要：Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique. A three-layer model based on transmission line theory and the genetic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interracial thermal resistance. The results show that the average thermal conductivity of 330- 1000nm aluminium oxide thin films is 3.3 Wm^-1K^-1 at room temperature. No significant thickness dependence is found. The uncertainty of the measurement is less than 10%.Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique. A three-layer model based on transmission line theory and the genetic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interracial thermal resistance. The results show that the average thermal conductivity of 330- 1000nm aluminium oxide thin films is 3.3 Wm^-1K^-1 at room temperature. No significant thickness dependence is found. The uncertainty of the measurement is less than 10%.

关 键 词：PULSARS x-ray spectra relativity and gravitation REDSHIFT 

分 类 号：TK124[动力工程及工程热物理—工程热物理]