Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient  

作　　者：李明 马向阳 杨德仁 

机构地区：[1]State Key Lab of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027

出　　处：《Chinese Physics Letters》2008年第2期648-650,共3页中国物理快报（英文版）

基　　金：the National Natural Science Foundation of China under Grant No 50672085, the Programme for Changjiang and Innovative Research Team of China under Grant No 0651, and the Programme for New Century Excellent Talents in University under Grant No 040537. The author is grateful Dr J. Vonhellmont at the University of Gent, Belgium for helpful discussion.

摘　　要：By means of low-temperature （10 K） Fourier transform infrared absorption spectroscopy, the kinetics of nitrogen indiffusion in Czochralski （CZ） silicon annealed at 1150-1250℃ in nitrogen ambient is investigated. Moreover, the nitrogen diffusivities in CZ silicon at elevated temperatures deduced herein are in good agreement with those previously obtained in float-zone silicon, thus leading to the conclusion that the nitrogen indiffusion in CZ silicon at elevated temperatures is via nitrogen pairs.By means of low-temperature （10 K） Fourier transform infrared absorption spectroscopy, the kinetics of nitrogen indiffusion in Czochralski （CZ） silicon annealed at 1150-1250℃ in nitrogen ambient is investigated. Moreover, the nitrogen diffusivities in CZ silicon at elevated temperatures deduced herein are in good agreement with those previously obtained in float-zone silicon, thus leading to the conclusion that the nitrogen indiffusion in CZ silicon at elevated temperatures is via nitrogen pairs.

关 键 词：SHALLOW THERMAL DONOR OXYGEN PRECIPITATION CRYSTALS COMPLEXES 

分 类 号：TG156.2[金属学及工艺—热处理]