Fabrication of an Integrated Pixel with an Organic Light-Emitting Diode Driven by Copper Phthalocyanine Organic Thin Film Transistors  

Fabrication of an Integrated Pixel with an Organic Light-Emitting Diode Driven by Copper Phthalocyanine Organic Thin Film Transistors

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作  者:于顺洋 仪明东 马东阁 

机构地区:[1]State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049

出  处:《Chinese Physics Letters》2008年第2期755-757,共3页中国物理快报(英文版)

基  金:Supported by the Hundred Talents Program of Chinese Academy of Sciences, the National Science Fund for Distinguished Young Scholars of China under Grant No 50325312, the National Natural Science Foundation of China for Creative Research Groups under Grant No 20621401, and the National Basic Research Programme of China under Grant No 2002CB613404.

摘  要:An organic integrated pixel with organic light-emitting diodes (OLEDs) driven by organic thin film transistors (OTFTs) is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide (ITO) glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4cm^2/Vs and on/off ratio of 10^3 order. The OLED is driven well and emits the brightness as large as 2100cd/m^2 at a current density of 14.6 μA /cm^2 at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.An organic integrated pixel with organic light-emitting diodes (OLEDs) driven by organic thin film transistors (OTFTs) is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide (ITO) glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4cm^2/Vs and on/off ratio of 10^3 order. The OLED is driven well and emits the brightness as large as 2100cd/m^2 at a current density of 14.6 μA /cm^2 at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.

关 键 词:CONJUGATED POLYMERS INSULATOR 

分 类 号:TN312.8[电子电信—物理电子学]

 

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