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作 者:张宁[1] 伦秀君[1] 王强强[1] 何敬锁[2]
机构地区:[1]北京化工大学物理与电子科学系,北京100029 [2]首都师范大学物理系,北京100037
出 处:《光学与光电技术》2008年第1期37-40,共4页Optics & Optoelectronic Technology
基 金:北京市教育委员会科技发展计划面上项目资助(KM200610028005)
摘 要:半导体光放大器(SOA)是具有优良非线性效应的光子器件,在光开关、波长变换、光逻辑运算中有重要的应用。从SOA裁流子的速率方程和耦合波方程出发,建立了基于SOA的交叉增益调制波长变换理论模型,并利用分段模型分析方法,对SOA的交叉增益调制波长变换的消光比特性进行了详细的研究。研究结果表明,适当增大信号光功率、减小探测光功率并选择合适的波长差和SOA长度,可以有效地提高传输信号的消光比。The semiconductor optical amplifier (SOA) is a kind of photon device which has the excellent nonlinear characteristics and important application for all-optical switching, wavelength conversion, and optical logic calculations. Based on the carrier rate equation and the optical power propagation equation, a theoretical model of wavelength conversion based on cross gain modulation in SOA is derived. Characteristics of extinction ratio of converted signal are studied in details based on seg- mental model of SOA. It shows that the extinction ratio would be increased with the increase of the optical control signal power, the decrease of the optical probe signal power, the correct selection of the difference of the two optical wavelength and the length of SOA.
关 键 词:全光波长变换 半导体光放大器 消光比 信号光功率
分 类 号:TN256[电子电信—物理电子学]
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