Surface characteristics of SiO_2-TiO_2 strip fabricated by laser direct writing  

作　　者：李爱魁 王泽敏 刘家骏 曾晓雁 王春霞 陈弘达 

机构地区：[1]Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology [2]State Key Laboratory for Integrated Optoelectronics Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Optics Letters》2008年第2期108-111,共4页中国光学快报（英文版）

基　　金：Hi-Tech Research and Development Program of China under Grant No.2005AA311030

摘　　要：SiO2-TiO2 sol-gel films are deposited on SiO2/Si by dip-coating technique. The SiO2-TiO2 strips are fabricated by laser direct writing using an ytterbium fiber laser and followed by chemical etching. Surface structures, morphologies and roughness of the films and strips are characterized. The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in structure and a shrinkage concave groove forms if the film is irradiated by laser beam. The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time. But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time. After being etched for 28 s, the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.SiO2-TiO2 sol-gel films are deposited on SiO2/Si by dip-coating technique. The SiO2-TiO2 strips are fabricated by laser direct writing using an ytterbium fiber laser and followed by chemical etching. Surface structures, morphologies and roughness of the films and strips are characterized. The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in structure and a shrinkage concave groove forms if the film is irradiated by laser beam. The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time. But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time. After being etched for 28 s, the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.

关 键 词：ETCHING Fiber lasers Laser beam effects SOL GELS Surface morphology Surface roughness Surface structure Titanium oxides 

分 类 号：TN249[电子电信—物理电子学]