掺Al富Si/SiO_2薄膜制备及紫外发光特性研究  

Preparation of Al-Doped Si-Rich/SiO_2 Thin Film and Its Ultraviolet Photoluminescence Characteristics

作　　者：王国立[1] 郭亨群[1] 

机构地区：[1]华侨大学信息科学与工程学院,福建泉州362021

出　　处：《半导体技术》2008年第2期109-112,共4页Semiconductor Technology

基　　金：国家自然科学基金重点资助项目(60336010);国家自然科学基金项目(60678053)

摘　　要：采用射频磁控溅射技术制备出掺Al的富Si／SiO2复合薄膜，以不同退火温度对样品进行热处理。对样品进行X射线衍射（XRD）、X射线光电子能谱（XPS）、红外吸收光谱（FFIR）、光致发光（PL）和光致发光激发谱（PLE）检测。结果表明SiO2薄膜中存在纳米Si晶粒，并且含有AlOx成分。室温下，可以观察到位于3．24～3．42ev的较强紫外光致发光，其发光强度随退火温度和Al含量的变化而变化。分析表明该发光带与SiO2中的氧空位缺陷有关，缺陷分布与纳米＆的形成以及不同Al含量的氧化有关，从而影响薄膜发光强度。The composite film of Al-doped Si-rich/SiO2 was prepared by RF magnetron sputtering technology, and annealed at different temperatures. The sample was tested by spectrums of XRD, XPS, FTIR, PL and PLE. Results indicate that the films contained Si nanocrystals and AlOe; ultraviolet photoluminescence peaks with energy around 3.24 - 3.42 eV are observed at room temperature. The intensity of the ultraviolet light varies with annealing temperature and Al content. The analysis reveals that it is attributed to oxygen vacancy defects in SiO2, the distribution of which associates with the formation of Si nanocrystals and oxidation of Al with different contents, thus the intensity of light changes.

关 键 词：纳米硅/二氧化硅 铝掺杂 紫外光致发光 射频磁控溅射 

分 类 号：TN305.3[电子电信—物理电子学]