脉冲激光辐照单晶硅形成的低维结构及其光致荧光特性  

Hole-net structure and photoluminescence emission monocrystalline on silicon irradiated by laser

作　　者：许丽[1] 黄伟其[1] 吴克跃[1] 金峰[1] 王海旭[1] 

机构地区：[1]贵州大学贵州省光电子技术与应用重点实验室,贵阳550025

出　　处：《强激光与粒子束》2008年第1期58-61,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金资助课题(10547006)

摘　　要：将功率密度约为0.5 J.s-1.cm-2、脉冲宽度约为8 ns、束斑直径为0.045 mm、波长为1 064nm的YAG激光束照射在硅样品表面打出小孔,在孔内的侧壁上形成较规则的网孔状结构;该结构有很强的光致荧光,其强度比该样品的瑞利散射强;发光峰中心约在700 nm处。在无氧化的环境里用激光加工出的硅样品几乎无发光,这证实了氧在光致荧光增强上起着重要作用。用冷等离子体波模型来解释孔侧壁网孔状结构形成的机理,并用量子受限-发光中心模型来解释纳米网孔壁结构的强荧光效应。当激光辐照时间为9 s时,孔洞侧壁上的网孔状结构较稳定,且有较强的光致荧光。A kind of hole-net structure can be formed on silicon sample irradiated by pulse laser with power of 0.5 J · s^-1 · cm^-2 and wavelength of 1 064 nm. The photoluminescence（PL） emission is enhanced by the hole-net structure. The PL peak center is about 700 nm. The oxidation-free silicon sample almost does not emit, which proves that oxidation of silicon may be most important in enhancing PL emission. The quantum confinement-luminescence center model is used to explain the increasing PL emission in the hole-net structure. The plasma wave model is used to explain the forming mechanism of hole-net structure. Under the optimum conditions in preparing process, the sample with enhanced PL emission and more stable low-dimensional structures can be obtained by 9 s irradiation.

关 键 词：激光辐照 纳米网孔壁 光致荧光增强 氧化 

分 类 号：TN249[电子电信—物理电子学]