不同Cu含量的TiNiCu形状记忆合金薄膜的组织与相变  

Microstructure and Phase Transformation of TiNiCu Shape Memory Alloy Films with Different Cu Content

作　　者：卞铁荣[1] 卢正欣[2] 井晓天[2] 

机构地区：[1]泸州医学院附院分子医学生物中心,四川沪州646000 [2]西安理工大学材料科学与工程学院,陕西西安715400

出　　处：《表面技术》2008年第1期42-44,共3页Surface Technology

摘　　要：利用TEM、XRD、DSC测试方法,首次系统地研究了直流磁控溅射制备的3种不同Cu含量的TiNiCu形状记忆合金薄膜的退火组织和加热与冷却过程中发生的相变。结果表明:退火后的薄膜获得了形状记忆性能;随着薄膜中Cu含量的增加,薄膜的退火组织出现差异,相变滞后明显变小,相变温区变窄;使获得快速响应的形状记忆合金薄膜成为可能。Using TEM, XRD and DSC method, annealed microstructure and transformation in heating and cooling of three TiNiCu shape memory alloy films with different Cu content by DC magnetron sputtering have been first studied systematically. The results show that annealed films gain shape memory; Annealed microstructure of annealed films takes on change, transformation hysteresis and transformation temperature range grow narrow obviously as Cu content of films rises. It＇s possible that gaining the film of responding lastly.

关 键 词：TINICU形状记忆合金 薄膜 相变 

分 类 号：TG174.444[金属学及工艺—金属表面处理]