非晶态半导体的阈值开关机理  

Threshold Switch Mechanism of Amorphous Semiconductor

作　　者：齐吉泰[1] 刘丽敏[2] 

机构地区：[1]绥化学院,黑龙江绥化152061 [2]机械工业出版社,北京100037

出　　处：《现代电子技术》2008年第4期184-185,共2页Modern Electronics Technique

摘　　要：从理论上定性地分析了非晶态半导体的阈值开关机理。利用非均匀模型、热与热电理论和电子开关模型等,从3个方面描述非晶态半导体的阈值开关形成的原因,给出非晶态半导体的阈值开关的"开态"和"关态"时的形成过程,对不同状态下载流子的运动规律、电场强度、电导率进行了较详尽的分析,从而论述非晶态半导体的阈值开关机理。The paper analyses threshold switch mechanism of amorphous semiconductor theoretically. Using the non-even-model, thermal and thermoelectric theory and the electronic switching model and so on, describes reason of forming amorphous semiconductor from three aspects, proposes its forming process on “On State” and “Off State”, analyses the different condition downloading current movement rule, the electric-field intensity and the conductivity in a detail. Thus elaborates threshold switch mechanism of amorphous semiconductor.

关 键 词：非晶态 阈值开关 电导率 半导体 

分 类 号：TN401[电子电信—微电子学与固体电子学]