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机构地区:[1]天津大学化工学院杉山表面技术研究室,天津300072
出 处:《化工学报》2008年第2期503-507,共5页CIESC Journal
基 金:国家自然科学基金项目(50071039;50271046);教育部博士点基金项目(20030056034)~~
摘 要:采用单槽控电位双脉冲技术在n-Si(111)晶面上制备了[Ni80Fe20/Cu]n多层膜,用SEM观测了多层膜的断面形貌,利用X射线衍射(XRD)表征了多层膜的超晶格结构。采用四探针法研究了多层膜的巨磁电阻(GMR)性能,结果表明,多层膜的GMR值随着Cu层厚度的变化发生周期性振荡,随着NiFe层厚度的增加先增大后减小;当样品结构为[NiFe(1.6nm)/Cu(2.6nm)]80时,GMR值可达6.4%;多层膜的最低饱和磁场仅为750Oe。磁滞回线测试结果表明,反铁磁耦合多层膜具有较小的矩形比,更适宜作为磁头材料。[Ni80 Fe20/Cu]n multilayers were fabricated onto n-Si (111) substrates by double pulse potentiostatic electrodeposition from single bath. The typical cross-sectional image of multilayer was observed by SEM, and the superlattice structure was characterized by high-angle X-ray diffraction. The giant magnetoresistance (GMR) properties of multilayers were investigated by four-probe technique. The results indicated that with the increase of Cu layer thickness, GMR value showed a periodical oscillation tendency, while increasing the thickness of NiFe layers, GMR value decreased after reaching its maximum. The room-temperature GMR value was up to 6.4% for [NiFe (1.6 nm) /Cu (2.6 nm)]80, and the minimum saturation field was only 750Oe. Hysteresis loops revealed that the anti-ferromagnetic coupled multilayers with a small squareness ratio were suitable for magnetic head materials.
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