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作 者:杨志平[1] 王少丽[1] 杨广伟[1] 田晶[2] 李盼来[1] 李旭[1]
机构地区:[1]河北大学物理科学与技术学院发光与显示研究所,河北保定071002 [2]河北大学电子信息工程学院,河北保定071002
出 处:《发光学报》2008年第1期81-84,共4页Chinese Journal of Luminescence
基 金:河北省科学技术发展基金资助项目(51215103b)
摘 要:采用高温固相法合成了适用于UVLED芯片激发的NaCaPO4∶Tb3+绿色荧光粉并对其发光性质进行了研究。该荧光粉的发射峰位于418,440,492,545,586,622nm,分别对应Tb3+的5D3→7F5、5D3→7F4、5D4→7F6、5D4→7F5、5D4→7F4、5D4→7F3能级跃迁。其中位于492,545nm的发射峰最强,样品发射很好的绿光。主要激发峰位于380~400nm之间,属于4f→4f电子跃迁吸收,与UVLED芯片的发射相匹配。考察了Tb3+掺杂浓度和Li+,Na+和K+作为电荷补偿剂对样品发光性能的影响:Tb3+的最佳掺杂浓度为10%,以Li+的补偿效果最好。NaCaPO4∶Tb3+是一种适用于白光LED的绿色荧光材料。The NaCaPO4 : Tb^3+ green phosphor applicable for UVLED chip was synthesized by the general high temperature solid-state reaction and its luminescence properties were investigated. It shows six major emission peaks locating at 420,442,492,545,584 and 620 nm, which correspond to the ^5D3→^7F5、^5D3→^7F4、^5D4→^7F6、^5D4→^7F5、^5D4→^7F4 and ^5D4→^7F3 typical transition of Tb^3+ , respectively. The most intense peaks located at 492 nm and 545 nm and the phosphor shows excellent green emission. The excitation spectra contain a weak broad band extending from 200 to 280 nm and two peaks at 330 - 390 nm, which correspond well with the emission of UVLED (350 - 410 nm). The effects of doped-Tb^3+ concentration and charge-compensating of Li ^+ , Na ^+ and K^+ on the emission intensity were also investigated. It shows that the optimum dopedTb^3+ concentration is 10% and Li^+ gives the best improvement to enhance the intensity of the emission. The NaCaPO4: Tb^3+ is a potential green-emitting phosphor for white light emitting diode (W-LED).
关 键 词:发光 荧光粉 NaCaPO4:Tb^3+ 白光LED
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