界面效应对弱受限球形量子点异质结内电子能级的影响  

Interface Effects on Energy Level in Weakly-confined Spherical Semiconductor Quantum dot Heterostructures

作　　者：郭富胜[1] 赵铧[1] 朱孟兆[1] 李韦[1] 

机构地区：[1]重庆大学数理学院物理系和凝聚态物理研究所,重庆400044

出　　处：《量子光学学报》2008年第1期81-86,共6页Journal of Quantum Optics

基　　金：重庆大学985人才引进基金(4937)

摘　　要：采用球壳结构和渐变有限深谐振子势阱模型,分析了界面效应对弱受限半导体量子点异质结的束缚态电子基态能级的扰动情况。计算表明,对于处于弱受限的量子点,异质结厚度在30 nm内界面效应明显。当异质结壳层厚度进而增大的时候界面效应的影响将逐渐减弱,受扰动的基态能级间隔逐渐减小,到最后各基态能简并为某一固定值。Based on spherical shell structure and graded finite potential well model, the interface effects on the ground state level shifts of bound states in a weakly-confined spherical semiconductor quantum dot heterostructures are analyzed and calculated. It indicates that the interface effects are fairly significant when the quantum dots are weakly confined and in the thickness less than or equal to 20nm. The interface effects will be weakened when the thickness of heterostructures keep on augmenting, and the disturbed ground energy level gap will gradually minish. In the end, every ground energy level will degenerate into a certain fixed value.

关 键 词：量子点 异质结 界面效应 弱受限 渐变势阱 

分 类 号：O431[机械工程—光学工程]