利用LiF空穴阻挡层提高有机发光二极管效率(英文)  

Improved Efficiency in OLEDs with a LiF Interlayer in Hole Transport Layer

作　　者：连加荣[1] 袁永波[1] 周翔[1] 

机构地区：[1]中山大学光电材料与技术国家重点实验室,显示材料与技术广东省重点实验室,广州510275

出　　处：《电子器件》2008年第1期36-39,共4页Chinese Journal of Electron Devices

基　　金：广东省科技计划资助(2006A10801001);广东省自然科学基金资助项目(05003294)

摘　　要：通过引入LiF,明显提高了基于八羟基喹啉铝双层有机发光二极管的发光效率。2nm厚的LiF空穴阻挡层可将器件的发光效率从2.6cd/A提高到6.3cd/A,研究结果表明,LiF空穴阻挡层可以有效调节空穴的注入与传输,平衡器件中的空穴与电子,提高有机发光二极管的发光效率。We demonstrate an improved efficiency in typical Alq3 based bilayer OLEDs with a thin LiF interlayeiF interlayer can effectively influence the electrical performancer inserted into the hole transport layer （e. g. NPB）. This thin L and singnificantly improve electroluminescence （EL） efficiency of the devices. The devices with 2 nm LiF layer at optimal position in NPB exhibit a maximum EL efficiency of 6. 3 cd/A, which is 1.5 times higher than that （2. 6 cd/A） of the control device without the LiF. Our results show that the LiF interlayer in hole transport layer may be useful for adjusting the hole injection and transport, and improving the hole-electron balance and EL efficiency in OLEDs.

关 键 词：LIF 空穴阻挡层 有机发光二极管 效率 

分 类 号：TN312.8[电子电信—物理电子学]