等离子平板显示中冷阴极纳米金刚石膜的制备(英文)  

Fabrication of Nanocrystalline Diamond Film for Cold Cathode in Plasma Display Panels

作　　者：祝雪丰[1] 王林军[1] 胡广[1] 刘建敏[1] 黄建[1] 徐金勇[1] 夏义本[1] 

机构地区：[1]上海大学,上海200072

出　　处：《电子器件》2008年第1期72-76,共5页Chinese Journal of Electron Devices

基　　金：the National Natural Science Foundation of China (60577040);Shanghai Foundation of Applied Materials Research and Development (0404);Nano-technology project of Shanghai (0452nm051,0552nm046);Shanghai Leading Academic Disciplines (T0101) .

摘　　要：讨论大面积4cm×4cm纳米金刚石膜制备工艺.采用电子辅助-热丝化学气相沉积法(EA-HFCVD)在硅片上沉积纳米金刚石膜.生长过程中,预先加6安培偏流生长1小时,然后在0.8千帕条件下,无偏流生长3小时.原子力镜表征晶粒尺寸为30纳米.样品上任意三点采用原子力镜表征,表现出良好均匀性.采用偏振光椭圆率测量仪和分光计分别表征样品的折射率和透射率.红外波段透过率超过50%.金刚石膜表面分别进行氢化和氧化处理.通过表征,氢化处理后膜比氧化处理后膜对应的γ值大,约为0.45 .This paper discusses the fabrication of nano-crystalline diamond films of large area up to 4 cm×4 cm. Using electron assisted-hot filament chemical vapor deposition （EA-HFCVD） method, diamond films were synthesized with a bias current of 6A applied for 1h, followed with no bias current for 3h at 0. 8kPa gas pressure. Atomic force microscopy （AFM） study revealed the diamond grain size of 30nm. Three points randomly selected on the sample were characterized by AFM. Good continuity of diamond film was proven. Applying ellipsometer and spectrometer, we measured the refractive index and transmittance of prepared diamond film. Good quality was proven with a transmittance above 50% in the infrared range. Defined H- and O- surface termination of diamond films were achieved respectively. Using certain methodology, we found out the H-terminated diamond films outperformed O-terminated diamond films with γ around 0. 45.

关 键 词：纳米金刚石膜 高γ 透过率 电子辅助-热丝化学气相沉积法(EA-HFCVD) 

分 类 号：TN873.94[电子电信—信息与通信工程]